• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A grinding apparatus comprising a chuck table for holding a wafer, a grinding unit having a spindle for rotating a grinding wheel, an inclination adjusting unit for adjusting the inclination of the axis of rotation of the chuck table with respect to the axis of rotation of the spindle, an interactive control panel and a control part. The control part is adapted to compare the information on the segmental target shape entered in a target shape input field with the information on the present segmental shape entered in an input field of the present shape and then to control the inclination setting unit, to change the inclination of the axis of rotation of the chuck table so that the wafer is ground to obtain the sectional target shape of the wafer.
    公开号:AT522399A2
    申请号:T50286/2020
    申请日:2020-04-03
    公开日:2020-10-15
    发明作者:
    申请人:Disco Corp；
    IPC主号:
    专利说明:

    BACKGROUND OF THE INVENTION Field of the Invention
    The invention relates to a grinding device for grinding a wafer by using abrasive elements.
    Description of the related art
    In a grinding apparatus for grinding a wafer by using abrasives, a grinding wheel on which abrasives are annularly arranged is rotated and a chuck table having a holding surface is rotated in the state where the wafer is held on the holding surface. To grind the wafer, the grinding wheel is positioned over the wafer held on the holding surface of the chuck table such that the abrasive elements pass through the center of the wafer, viewed from above, while the grinding wheel is rotating. Accordingly, the abrasive elements are suitable for coming into contact with a radial area of the wafer in order to thereby grind the wafer. In order to make the radial area of the wafer on the holding surface parallel to the grinding surface of each abrasive element, the ratio between the inclination of an axis of rotation of the chuck table and the inclination of an axis of rotation of the grinding wheel is set (see JP 2015-009295A, for example).
    Furthermore, after the grinding has been carried out, the wafer is polished in order to increase its tool strength. That is, the grinding track formed when the wafer was ground is removed by the polishing. To polish the wafer, a polishing pad is pressed onto the wafer so that the wafer is covered so that a central part of the wafer tends to be polished more. Accordingly, when the wafer is ground to have a uniform thickness and this wafer is polished next, the sectional shape of the polished wafer becomes a sectional shape of the thin center type such that the central part of the wafer is thinner is than the edge part of the wafer. In order to make the thickness of the wafer uniform in the state after polishing is carried out, a technique of grinding the wafer to obtain a sectional shape of the thick center type such that the central part of the wafer is thicker than the peripheral part of the wafer has been proposed (see e.g. JP 2013-004726A).
    However, the amount of polishing in the central part of the wafer and the peripheral part of the wafer varies depending on the polishing conditions including the materials of the polishing pad, the abrasive grains and the wafer as a workpiece, the length of time of pressing the polishing pad on the wafer, and the force of pressing the polishing pad the wafer. That is, the thin center shape of the polished wafer varies depending on the polishing conditions. In order to cope with this problem, it is necessary to change the difference in thickness between the central part and the peripheral part of the ground thick center type wafer according to the polishing conditions, thereby adjusting the thick center shape of the wafer.
    The adjustment of the thick center shape of the wafer is carried out by changing the inclination of the rotation axis of the chuck table with respect to the rotation axis of the grinding wheel. However, this adjustment of the inclination requires repeating grinding, polishing and measuring the wafer thickness, causing the required time to be increased.
    It is therefore an object of the present invention to provide a grinding apparatus which can enable the inclination of the axis of rotation of the chuck table to be adjusted with respect to the axis of rotation of the grinding wheel.
    According to an aspect of the present invention, there is provided a grinding apparatus comprising: a holding unit including a chuck table having a holding surface for holding a wafer, the chuck table being rotatable about a rotation axis passing through the center of the holding surface; a grinding unit comprising a spindle having an axis of rotation and a grinding wheel mounted on the lower end of the spindle, the grinding wheel having a plurality of abrasive elements arranged in an annular manner, wherein when the spindle is rotated, about thereby to rotate the grinding wheel, the wafer held on the chuck table is ground by the abrasive elements of the grinding wheel being rotated; an inclination adjusting unit for adjusting the inclination of the axis of rotation of the chuck table with respect to the
    Axis of rotation of the spindle; and an interactive (or touch)
    Control panel. The abrasive members are capable of grinding the wafer held on the chuck table in a grinding area as a radial area extending from the center of the holding surface to the outer periphery thereof. The interactive control panel is suitable for displaying a target shape input field for inputting information relating to a sectional target shape of the wafer and an input field of the present shape for inputting information relating to a present sectional shape of the ground wafer in the state in which the inclination of the axis of rotation of the clamping table is still has not been changed. The grinding apparatus further comprises a control part for comparing the information regarding the sectional target shape of the wafer as input in the target shape input field with the information regarding the present sectional shape of the wafer as input in the input field of the present shape and then controlling the inclination setting unit to the inclination of the rotation axis of the chuck table so that the wafer is ground to obtain the target shape of the wafer in sections.
    The holding unit preferably comprises a plurality of holding units, each of which has a clamping table. The grinding apparatus further comprises a positioning unit for moving one of the plurality of holding units to a grinding position where the wafer is ground by the grinding unit. The interactive control panel is adapted to further display a selection part for use in selecting one of the plurality of holding units. The control part is adapted to change the inclination of the rotation axis of the chuck table in the holding unit, which is selected by using the selection part.
    Information relating to the sectional shape of the wafer is preferably entered into the target shape input field and the input field of the present shape each time the processing conditions are specified when processing the wafer.
    According to the present invention, a sectional target shape of the wafer can be set in the interactive control panel. Furthermore, a present sectional shape of the wafer can be entered into the interactive control panel. The result of a comparison between the sections
    The target shape and the present sectional shape can
    The control part controls the inclination adjusting unit for changing the inclination of the axis of rotation of the chuck table so that the wafer is ground to obtain the sectional target shape.
    In the case where the grinding apparatus includes a plurality of holding units and the interactive control panel includes a selection part for use in selecting one of the plurality of holding units, the holding unit can be selected as the object of adjusting the inclination of the rotation axis on the interactive control panel.
    In the case where information regarding the sectional shape of the wafer is inputted into the target shape input field and the input field of the present shape, each time processing conditions are set in processing the wafer, a plurality of wafers having different sectional shapes can be in one Grinding device can be obtained.
    The above and other objects, features and advantages of the present invention and the manner of realizing the same will become apparent upon study of the following specification and appended claims with reference to the accompanying drawings depicting a preferred embodiment of the invention
    show obvious and the invention itself gets best at it
    Understood. BRIEF DESCRIPTION OF THE DRAWINGS
    The FIG. 1 is a perspective view showing a grinding apparatus of a preferred embodiment of FIG
    corresponding to the present invention;
    the FIG. 2 is a sectional side view of a holding unit and a grinding unit incorporated into the grinding apparatus shown in FIG. 1 are integrated;
    the FIG. 3 is a sectional side view showing a grinding work of grinding a wafer by using the grinding unit;
    the FIG. Fig. 4 is a sectional side view illustrating a manner of measuring the thickness of the wafer ground by the grinding unit;
    the FIG. 5A is a sectional view illustrating a thick center type wafer;
    the FIG. 5B is a sectional view showing a wafer
    of the thin center type;
    the FIG. 5C is a sectional view illustrating a seagull wing type wafer;
    the FIG. 5D is a sectional view illustrating an inverted gullwing type wafer;
    the FIG. 5E is a sectional view showing a uniform type wafer;
    the FIG. 6 is an illustration showing a condition setting screen (or condition setting screen) displayed on an interactive control panel;
    the FIG. Fig. 7 is a schematic plan view showing the relationship between a chuck table, a wafer and an annular ring formed by a plurality of abrasive members, and also showing the positions of two fine adjustment shafts and a fixed shaft;
    the FIG. 8 is an illustration similar to FIG. 6, which illustrates a state that a present sectional shape and a target sectional shape of the wafer are input and a change amount is displayed for each fine adjustment shaft;
    the FIG. 9 is an illustration similar to FIG. 6, showing a state that an action menu for use in selecting an item of one of the four chuck tables is displayed; and
    the FIG. 10 is an illustration similar to FIG. 6, which shows a state that each fine adjustment shaft has been moved and the present position of each fine adjustment shaft has been updated for display. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
    Referring to FIG. 1 shows a grinding device 1 according to a preferred embodiment of the present invention. The grinding device 1 comprises a first grinding unit 30, a second grinding unit 31 and a polishing unit 4. The first grinding unit 30 and the second grinding unit 31 function to grind a wafer (not shown in FIG. 1) held on a chuck table to be described below becomes. The polishing unit 4 functions to polish the wafer ground by the first grinding unit 30 and the second grinding unit 31. The grinding device 1
    comprises a first basic housing 10 and a second basic housing 11,
    that with the first base housing 10 on the back thereof in the + Y direction shown in FIG. 1 indicated by an arrow + Y is connected. A standby area A is defined on the upper surface of the first body 10. The standby area A is an area where a wafer to be ground is loaded on the chuck table or the polished wafer is unloaded from the chuck table. On the other hand, a machining area B is defined on the upper surface of the second body 11. The processing area B is an area where the wafer loaded on the chuck table is processed by the first grinding unit 30, the second grinding unit 31, and the polishing unit 4.
    A first cartridge mounting part 150 and a second cartridge mounting part 151 are mounted on the front surface of the first body 10 in the -Y direction shown in FIG. 1 shown by an arrow -Y is provided. A first cassette 150 a that stores a plurality of wafers to be processed is mounted on the first cassette mounting part 150. A second cassette 151 a for storing the processed wafers is mounted on the second cassette mounting part 151.
    A robot 155 is provided on the rear side of the first cartridge 150a in the + Y direction. The robot 155 functions to take out one of the wafers from the first cassette 150a before processing and put the wafer in the second cassette 151a after processing. An area for interim placement 152 is formed adjacent to the robot 155. The wafer removed from the first cassette 150a is transferred by the robot 155 to the area 152 for temporary placement. A positioning unit 153 is provided in the area for interim placement 152 in order to position the wafer in the area for interim placement 152.
    A first transfer unit 154a is provided adjacent to the positioning unit 153 for transferring the wafer from the area for intermediate setting 152 to the clamping table. The first transfer unit 154a is configured to hold the wafer and rotate about a vertical axis. That is, the first transfer unit 154a functions to hold the wafer placed in the area by the positioning unit 153
    intermediate settling 152 has been positioned and
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    then transfers the wafer to the chuck table provided in processing area B. A second transfer unit 154b is provided adjacent to the first transfer unit 154a to unload the wafer from the chuck table after processing. The second transfer unit 154b is also configured to hold the wafer and rotate about a vertical axis. A cleaning unit 156 is provided adjacent to the second transfer unit 154b in order to clean the wafer transferred by the second transfer unit 1545 after processing. That is, the processed wafer is transferred from the chuck table to the cleaning unit 156 through the second transfer unit 154b. The wafer cleaned by the cleaning unit 156 is transferred from the cleaning unit 156 to the second cassette 151a by the robot 155, and then stored in the second cassette 151a by the robot 155.
    A first column 12 is provided on the second base case 11 at the rear end thereof in the + Y direction so as to stand upright therefrom. A grinder feed unit 20 for loading the first grinder unit 30 is provided on the front surface of the first column 12 in the -Y direction. The grinder feed unit 20 includes a ball screw spindle 200 that has a vertical axis extending in the Z direction (ie, both the + Z direction shown by an arrow + Z and the -Z direction shown by an arrow -Z) ), a pair of guide rails 201 extending parallel to the ball screw 200, a motor 202 connected to the upper end of the ball screw 200 for rotating the ball screw 200, and a vertically movable plate 203 having an internal nut which is threadedly engaged in the ball screw 200 and has a pair of sliding parts each slidably mounted on the pair of guide rails 201. Accordingly, when the ball screw 200 is rotated by the motor 202, the vertically movable plate 203 is moved in the Z direction (that is, in both the + Z direction and the -Z direction) as guided by the guide rails 201, so that the first grinding unit 30 provided on the vertically movable platen 203 is moved (advanced) in the Z direction.
    The first grinding unit 30 comprises a spindle 300 which has a
    a vertical axis extending in the Z-direction, a housing 301 for rotatably supporting the spindle 300, a motor 302 for rotating the spindle 300, a circular mount 303 fixed to the lower end of the spindle 300, and a Abrasive wheel 304 detachably mounted on the lower surface of mount 303. The grinding wheel 304 includes a wheel base 304a and a plurality of abrasive members 304b provided on the lower surface of the wheel base 304a so as to be circularly arranged along the outer periphery of the wheel base 304a. Each abrasive member 304b has a shape like a rectangular prism. Accordingly, the plurality of abrasive elements 304b are arranged to form an annular ring. Each abrasive member 304b is an abrasive member for use in rough grinding and contains abrasive grains that are relatively large in size. That is, the first grinding unit 30 functions as a rough grinding unit for performing rough grinding on the wafer. The first grinding unit 30 is held by a holder 261 mounted on the front surface of the platen 203 vertically movable in the -Y direction. Further, a second column 13 is provided on the second base case 11 at the rear end thereof in the + Y direction so as to stand upright therefrom. The second column 13 is placed next to the first column 12 in the X direction, more specifically in the -X direction shown by an arrow -X. That is, the first column 12 is placed next to the second column 13 in the + X direction shown by an arrow + X. Another grinder feed unit 20 for loading the second grinding unit 31 is provided on the front surface of the second column 13 in the -Y direction. This grinder feed unit 20 for loading the second grinder unit 31 has the same configuration as that of the grinder feed unit 20 for loading the first grinding unit 30. Accordingly, the second grinding unit 31 is moved in the Z direction by the grinder feed unit 20 provided on the second column 13 (advanced). The second grinding unit 31 includes a spindle 310 having a perpendicular axis extending in the Z direction
    Housing 311 for rotatably supporting the spindle 310, a motor 312
    for rotating the spindle 310, a circular mount 313 attached to the lower end of the spindle 310, and a grinding wheel 314 detachably mounted on the lower surface of the mount 313. The grinding wheel 314 includes a wheel base 314a and a plurality of abrasive members 314b provided on the lower surface of the wheel base 314a so as to be circularly arranged along the outer periphery of the wheel base 314a. Each abrasive member 314b has a shape like a rectangular prism. Accordingly, the plurality of abrasive members 314b are arranged to form an annular ring. Each abrasive element 314b is an abrasive element for use in fine grinding and contains abrasive grains that are relatively small in size. That is, the second grinding unit 31 functions as a fine grinding unit for performing fine grinding on the wafer.
    Further, a third pillar 14 is provided on the second base case 11 at the left end thereof in the -X direction so as to stand upright therefrom. A moving unit Y 24 for moving the polishing unit 4 in the Y direction is provided on the front surface of the third column 14 in the + X direction. The moving unit Y 24 includes a ball screw 240 having a horizontal axis extending in the 7Y direction, a pair of guide rails 241 extending parallel to the ball screw 240, a motor 242 for rotating the ball screw 240, and a horizontally movable one A plate 243 having an internal nut threaded into the ball screw 240 and having a pair of sliding members each slidably mounted on the pair of guide rails 241. Accordingly, when the ball screw 240 is rotated by the motor 242, the horizontally movable plate 243 is moved in the Y direction (that is, in both the + Y direction and the -Y direction) as guided by the guide rails 241, so that the polishing unit 4 provided on the horizontally moving platen 243 is moved in the Y direction.
    Further, a polishing jig feeding unit 25 for feeding the polishing unit 4 is provided on the front surface of the horizontally moving platen 243 in the + X direction.
    That is, the polishing apparatus feed unit 25 functions to
    10738
    to move the polishing unit 4 vertically towards and away from the chuck table. The polisher feed unit 25 includes a ball screw 250 having a vertical axis extending in the Z direction, a pair of guide rails 251 extending parallel to the ball screw 250, a motor 252 connected to the upper end of the ball screw 250 to Rotating the ball screw 250 is connected, and a vertically movable plate 253 having an internal nut that is threadedly engaged in the ball screw 250 and has a pair of sliding parts, each slidably mounted on the pair of guide rails 251. Accordingly, when the ball screw 250 is rotated by the motor 252, the vertically movable plate 253 is moved in the Z direction (that is, in both the + Z direction and the -Z direction) as guided by the guide rails 251, so that the polishing unit 4 provided on the vertically movable platen 253 is moved (advanced) in the Z direction so as to move toward and away from the chuck table.
    The polishing unit 4 comprises a spindle 40 having a vertical axis extending in the Z direction, a housing 41 for rotatably supporting the spindle 40, a motor 42 for rotating the spindle 40, a circular mount 44 connected to the the lower end of the spindle 40, and a polishing pad 43 attached to the lower surface of the mount 44 for polishing the wafer 303 held on the chuck table. The polishing unit 4 is held by a holder 263 mounted on the front surface of the vertically movable platen 253 in the + X direction.
    As shown in FIG. 1, a rotating plate 6 having an upper surface 6a is rotatably provided on the second base body 11, and four chuck tables CTA, CTB, CTC and CTD are rotatably provided on the upper surface 6a of the rotating plate 6 so as to be equidistant are arranged in the circumferential direction of the rotary plate 6. A rotating shaft (not shown) for rotating the rotating plate 6 is provided in the center of the rotating plate 6 so that the rotating plate 6 is rotatable about the vertical axis of this rotating shaft. Accordingly, when the rotary plate 6 is rotated about its axis, the four chuck tables CTA, CTB, CTC and CTD also become
    rotated around the center of the rotary plate 6, so that each of these clamping tables CTA to CTD in turn from a loading position in the vicinity of the area for intermediate setting 152 through a first grinding position under the first grinding unit 30 and a second grinding position under the second grinding unit 31 a polishing position under the polishing unit 4 can be moved. That is, the rotary plate 6 functions as a positioning unit for moving each of the chuck tables CTA to CTID to the first grinding position, the second grinding position, and the polishing position. As shown in FIG. As shown in FIG. 2, the spindle 300 of the first grinding unit 30 has an axis of rotation 300a that extends perpendicularly in the Z direction, and the grinding wheel 304 is rotated about the axis of rotation 300a of the spindle 300. Similarly, the spindle 310 of the second grinding unit 31 has an axis of rotation 310a that extends perpendicularly in the Z direction, and the grinding wheel 314 is rotated about the axis of rotation 310a of the spindle 310. Each of the four chuck tables CTA to CTD includes a suction holding part 510 made of a porous member for holding the wafer under suction and a circular cylindrical frame 511 for supporting the suction holding part 510. A motor 512 is under each of the four chucking tables CTA to CTD intended. The motor 512 functions to rotate each of the four clamping tables CTA to CTD about a rotation axis 513. Each of the four clamping tables CTA to CTD, the motor 512 and the rotation axis 513 form a holding unit 51. The suction holding part 510 is connected to a vacuum source (not shown) for Generating a suction force connected. The suction holding part 510 has an upper exposed surface as a holding surface 510a for holding the wafer under suction. That is, the suction force generated by the vacuum source is applied to the holding surface 510a of the suction holding part 510, whereby the wafer is held on the holding surface 510a under suction. Each of the four chuck tables CTA to CTD is supported by an inclination adjusting unit 56 for adjusting the inclination of the rotation axis 513 passing through the center of the holding surface 510a. The inclination adjusting unit 56 comprises at least three support parts. At least two of these support parts are movable support parts 52 and 53, and the remaining one is a fixed support part 54. The movable support parts 52 and 53 and the fixed support part
    54 are provided on the lower surface of the frame 511 so as to be arranged at equal intervals in the circumferential direction of the frame 511. As a modification, the reclining unit 56 may include three movable support parts and no fixed support part. That is, the inclination adjusting unit 56 may include only three movable support members. As another modification, the reclining unit 56 may include four or more support members including at least three movable support members and at least one fixed support member.
    The movable support part 52 comprises a motor 520 provided in an internal foot 55 of the grinding device 1, a fine adjustment shaft 521 connected to the motor 520 and adapted to be rotated by the motor 520, a support part 522 for rotatably supporting the Fine adjustment shaft 521, and a receiving part 523 protruding downward from the lower surface of the frame 511 and having a hole for receiving an upper part of the fine adjustment shaft 521. The motor 520 is connected to a control part 60 and is suitable to be operated under the control of the control part 60. The control part 60 also functions to control the operation of each component of the grinding apparatus 1.
    An external thread 521a is formed on the upper part of the fine adjustment shaft 521 and an internal thread 523a is formed on the inner side surface of the female part 523, the external thread 521a of the fine adjustment shaft 521 engaging the internal thread 523a of the female part 523. Further, an origin sensor 523b for detecting the position of the upper end of the fine adjustment shaft 521 is provided on the inner side surface of the receiving member 523. The control part 60 functions to detect the relative position of the upper end of the fine adjustment shaft 521 with respect to the origin sensor 523b. Further, the support part 522 is attached to the upper surface of the internal foot 55.
    The other movable support part 53 has the same configuration as that of the movable support part 52. That is, the movable support part 53 includes a motor (not shown) provided in the internal leg 55, one
    Fine adjustment shaft 531 connected to this motor and
    adapted to be rotated by this motor, a support member 532 for rotatably supporting the fine adjustment shaft 531 and a receiving part 533 protruding downward from the lower surface of the frame 511 and having a hole for receiving an upper part of the fine adjustment shaft 531. This motor is also connected to the control part 60 and is suitable to be operated under the control of the control part 60. An external thread 531a is formed on the upper part of the fine adjustment shaft 531 and an internal thread 533a is formed on the inner side surface of the female part 533, the external thread 531a of the fine adjustment shaft 531 engaging the internal fabric 533a of the female part 533. Further, an origin sensor 533b for detecting the position of the upper end of the fine adjustment shaft 531 is provided on the inner side surface of the receiving member 533. The control part 60 functions to detect the relative position of the upper end of the fine adjustment shaft 531 with respect to the origin sensor 533b. Further, the support part 532 is attached to the upper surface of the internal foot 55.
    On the other hand, the fixed support part 54 includes a fixed shaft 541 that has a lower end fixed to the upper surface of the internal footer 55 and an upper end fixed to the lower surface of the frame 511.
    In the movable support part 52, the motor 520 is controlled by the control part 60 for rotating the fine adjustment shaft 521 so that the external thread 521 a of the fine adjustment shaft 521 is moved with respect to the internal thread 523 a of the female part 523. Thereby, the female part 523 is moved vertically, and the height of the frame 511 with respect to the internal leg 55 is changed accordingly at the position where the female part 523 is provided. The operation of the other movable support part 53 is similar to that of the movable support part 52. On the other hand, in the fixed support part 54, the height of the frame 511 is not changed with respect to the internal leg 55 at the position where the fixed shaft 541 is provided. Thus, the female part 523 is moved perpendicularly with respect to the fine adjustment shaft 521 or the female part 533 becomes perpendicular with respect to the
    Fine adjustment shaft 531 moves, reducing the inclination of the axis of rotation
    513 of the chuck table CTA (CTB, CTC or CTD) is changed with respect to the rotation axis 300a of the spindle 300.
    The holding surface 510a is a tapered surface, and a part (radial portion) of the tapered surface is made parallel to the lower surface (grinding surface) of each abrasive member 304b or 314b by the operation of the tilt adjusting unit 56.
    As shown in FIG. As shown in FIG. 1, the grinding device 1 comprises an interactive control panel 70 for use in entering processing conditions or for displaying the status of the wafer being processed. The interactive control panel 70 includes a setting part 122 for use in setting the sectional target shape of the wafer and storing this sectional target shape, an input part 121 for use in inputting a present sectional shape of the wafer in the case of grinding the wafer in comparison with the present inclination of the rotation axis 513 and a selecting part 131 for use in selecting any one of the four chuck tables CTA to CTD that constitute the four holding units 51. The target sectional shape of the wafer to be set by the setting part 122 and the present sectional shape of the wafer to be inputted through the input part 121 are vertical sectional shapes obtained by cutting the wafer along the diameter thereof.
    The operation of the grinding device 1 will now be described as a series of steps.
    1. Preparation step
    In a preparation step, the machining conditions for rough grinding, fine grinding and polishing are entered from the interactive control panel 70. In actually executing the machining, the control part 60 reads the input of the working conditions and then controls the working of the
    Grinding device 1 under the read machining conditions.
    The control part 60 typically comprises a data processing unit (processor) and a storage unit (memory). For example, the data processing unit works
    according to a program stored in the storage unit, thereby providing various types of control necessary for editing
    are necessary under the entered processing conditions,
    are executed. Further, the control part 60 controls the inclination adjusting unit 56 shown in FIG. 2, according to the content input from the interactive control panel 70 and the segmented target shape of the wafer. That is, under the control of the control part 60, the inclination of the rotation axis 513 of each chuck table with respect to the rotation axis 300a or 310a of each grinding unit is adjusted by operating the inclination adjusting unit 56. This setting is described in more detail below. 2nd grinding step
    After inputting the processing conditions from the interactive control panel 70, the robot 155 is operated to take one of the wafers to be processed from the first cassette 150 a and next transfer the wafer to the positioning unit 153. After the wafer has been positioned in the intermediate depositing area 152 by actuating the positioning unit 153, the first transfer unit 154a is actuated in order to transfer the wafer from the positioning unit 153 to one of the four clamping tables CTA to CTD at the loading position near the first transfer unit 154a . It is now assumed that the wafer is transferred to the chuck table CTA and then held thereon.
    As shown in FIG. As shown in FIG. 3, the wafer W has an upper surface Wa and a lower surface Wb, and a protective tape T is attached to the lower surface Wb of the wafer W in advance. The wafer is held on the holding surface 510a of the chuck table CTA by the protective tape T. Then, the rotating plate 6 is rotated at a predetermined angle (e.g., 90 degrees) to move the wafer W to the first grinding position under the first grinding unit 30. Then, the chuck table CTA is rotated around the rotation axis 513, and the spindle 300 is rotated around the rotation axis 300a, thereby rotating the grinding wheel 304. Further, the grinder advancing unit 20 is operated to advance the first grinding unit 30 to advance (lower) the first grinding unit 30 in the Z direction until the abrasive elements 304b of the grinding wheel 304 being rotated come into contact with the upper surface Wa of the wafer . Thus, the upper surface Wa of the wafer W is roughly ground by the abrasive members 304b. At this time
    the abrasive elements 304b come into the radial area of the upper ones
    Area Wa of the wafer W.
    Although not shown, the grinding device 1 includes a thickness measuring unit for measuring the thickness of the wafer W. This thickness measuring unit includes a holding area measuring device for measuring the height of the holding area 510a and a wafer measuring device for measuring the height of the upper surface Wa of the wafer W, the thickness of the wafer W is measured from the difference between the height measured by the holding area measuring device and the height measured by the wafer measuring device. Accordingly, when the thickness of the wafer W becomes a predetermined thickness as measured above, the first grinding unit 30 is raised in the + Z direction by the grinding jig feed unit 20 to complete the rough grinding.
    Then the in FIG. The rotary plate 6 shown in FIG. 1 is further rotated at a predetermined angle (e.g., 90 degrees) to thereby move the wafer W to the second grinding position under the second grinding unit 31. Then the chuck table CTA, as shown in FIG. 3, rotated about the axis of rotation 513 and the spindle 310 is rotated about the axis of rotation 310a to thereby rotate the grinding wheel 314. Further, the grinder advancing unit 20 is operated to advance the second grinding unit 31 to advance (lower) the second grinding unit 31 in the -Z direction until the abrasives 314b of the grinding wheel 314 being rotated come into contact with the upper surface Wa des already coarsely ground wafers W come. Thus, the upper surface Wa of the roughly ground wafer W is further finely ground by the abrasive elements 314b. When the thickness of the wafer W becomes a predetermined thickness, the second grinding unit 31 is lifted in the + Z direction by the grinding jig feed unit 20 to complete the fine grinding.
    As in FIG. As shown in FIG. 4, three thickness measuring units 320, 321 and 322 are provided in the vicinity of the second grinding unit 31. The thickness measuring unit 320 functions to measure the thickness of a central part WO of the finely ground wafer W. The thickness measuring unit 322 functions to measure the thickness of an edge part We of the finely ground wafer W. The thickness measuring unit 321 functions to measure the thickness of an intermediate part Wm between
    the middle part Wo and the edge part We of the finely ground
    Wafers W. The control part 60 can read the thicknesses measured by the three thickness measuring units 320, 321 and 322. As a modification, a single thickness measuring unit may be provided to be movable in the radial direction of the wafer, so that the thicknesses of the central part Wo, the intermediate part Wm and the peripheral part We of the wafer can be measured by moving the single thickness measuring unit radially.
    The FIG. 5A to 5E show various sectional shapes of the wafer in the state after the fine grinding is carried out. That is, FIG. Fig. 5A shows a thick center type such that the thickness of the central part Wo is thicker than that of the edge part We. The FIG. Fig. 5B illustrates a thin center type such that the thickness of the central part Wo is less than that of the edge part We. The FIG. Fig. 5C shows a seagull wing type such that the thickness of the intermediate part Wm is thicker than that of the central part Wo and that of the edge part We. The FIG. 5D shows an inverted seagull wing type such that the thickness of the intermediate part Wm is less than that of the central part Wo and that of the edge part We. The FIG. 5E shows a uniform type such that the thickness of the central part Wo is equal to that of the intermediate part and that of the edge part We. by pressing the in FIG. 4 for measuring the thicknesses of the central part Wo, the intermediate part Wm and the edge part We, it is possible to determine which of the types shown in FIGS. 5A to 5E, the sectional shape of the wafer W belong.
    In FIG. 4 is the sectional shape of the uniform type wafer W as shown by a solid line. However, the central part of the wafer W is polished more by the polishing unit 4. Accordingly, in order to make a sectional shape of the wafer in the state after polishing into a uniform type, an ideal sectional shape of the wafer W in the state after finishing grinding is thick center type as shown in FIG. 4 is represented by a phantom line. 3rd polishing step
    After finishing the fine grinding, the turntable 6 is rotated further through a predetermined angle (e.g. 90 degrees) to
    thereby the wafer W to the polishing position under the polishing unit 4
    move. Then, the chuck table CTA is rotated and the spindle 40 is rotated, thereby rotating the polishing pad 43. Further, the polishing jig feed unit 25 is operated to advance (lower) the polishing unit 4 in the -Z direction until the polishing pad 43, which is rotated, comes into contact with the upper surface Wa of the finely ground wafer W. Accordingly, the upper surface Wa of the wafer W is polished by the polishing pad 43. When the thickness of the above-polished wafer W becomes a predetermined thickness, the polishing unit 4 is raised in the + Z direction by the polishing device feed unit 25 to complete the polishing.
    After finishing the polishing, the thus polished wafer W is held and unloaded from the chuck table CTA by the second transfer unit 154b, and then transferred to the cleaning unit 156 by the second transfer unit 154b. The wafer W is then cleaned by the cleaning unit 156 and next transferred by the robot 155 from the cleaning unit 156 to the second cassette 1511a. Finally, the wafer W is stored in the second cassette 1511a by the robot 155. 4. Setting the machining conditions in the preparatory step
    To set the machining conditions for the fine grinding in the preparatory step, a shown in FIG. The state setting screen 100 shown in FIG. 6 is shown on the interactive control panel 70. The state setting screen 100 has a display panel 110 of the stored position of the fine adjustment shaft, an input panel 120 of the wafer shape adjustment amount for grinding Z2, and a position memory panel 130. In the state setting screen 100, the symbol Z2 means the second in FIG. 1l illustrated grinding unit 31.
    As shown in FIG. 7, the two movable support parts 52 and 53 and the fixed support part 54 are located at three points which lie on a circle which corresponds to the outer circumference of each of the four clamping tables CTA to CTD, in such a way that these three points form an equilateral triangle , which has a center of gravity that coincides with the center of the holding surface 510a when viewed from above. That is, the two movable support parts 52 and 53 and the fixed support part 54 are between
    each chuck table and the one shown in FIG. 2 internal foot piece shown
    55 at the three positions just below the vertices of the above equilateral triangle. On the state setting screen 100 shown in FIG. 6, “L-wave” means the fine adjustment shaft 521 of the movable support part 52 and “R-wave” means the fine adjustment shaft 531 of the movable support part 53. As shown in FIG. As shown in FIG. 7, the center of the circle passing through the L-shaft, the R-shaft, and the fixed shaft 541 of the fixed support member 54 coincides with the center O of the holding surface 510a of each of the chuck tables CTA to CTD. The reference symbol D in FIG. 7 indicates the diameter of the holding surface 510a. The fixed shaft 541, the fine adjustment shaft 521, and the fine adjustment shaft 531 are arranged at equal intervals at the three positions just below the outer periphery of the holding surface 510a.
    The wafer W has a smaller diameter than the holding surface 510a. In FIG. 7, the reference symbol R indicates the radius of the wafer W. FIG. Further, the reference symbol r indicates the radius of the ring-shaped ring formed by the plurality of abrasive members 314b to be used for performing the fine grinding in the grinding step. Since each abrasive element 314b has a width, the radius r of the annular ring means the radius of a circle passing through the center of the width of each abrasive element 314b.
    As in FIG. As shown in FIG. 2, the holding surface 510a is a conical surface and the abrasive elements 314b come with the upper surface Wa of the wafer W in a grinding area WR as the radial area of the surface shown in FIG. 7 shown wafers W in contact. This grinding area WR extends from the center O of the holding surface 510a toward the fixed shaft 541. Furthermore, the distance from the center O to the intermediate part Wm of the grinding area WR is equal to half (R / 2) of the radius R of the wafer W.
    On the in FIG. 6, the stored position display panel of the fine adjustment shaft 110 displays the present Z positions of the fine adjustment shafts 521 and 531 of the two movable support members 52 and 53 of the inclination adjusting unit 56 shown in FIG. 2 is shown, that is, the present Z position of the L-wave shown in FIG 7 and the R-wave. In the display field 110 of the
    stored position of the fine adjustment shaft, “CTA” means the chuck table CTA, “CTB” means the chuck table CTB, “CTC” means the chuck table CTC, and “CTD” means the chuck table CTD. Further, in the display panel 110, the value for the L-wave in each of the chuck tables CTA to CTD represents the distance between the origin sensor 523b and the upper end of the fine adjustment shaft 521 of the one shown in FIG. 2. Similarly, the value for the R-wave in each of the chuck tables CTA to CTD represents the distance between the origin sensor 533b and the top of the fine adjustment shaft 531 of the FIG. 2. In the display panel 110, the minus sign for each value means that the upper end of the fine adjustment shaft 521 or 531 is lower in level than the origin sensor 523b or 533b.
    On the in FIG. 6, the state setting screen 100 shown in FIG. 6 includes the wafer shape adjustment amount in the Z2 loop input field 121, an input field of the present shape 121, a target shape input field 122, and a display field 123 of the change amount of the fine adjustment shaft 123.
    The input field of the present shape 121 is a field for inputting information (data) on the actual sectional shape of the wafer W as measured after performing fine test grinding using the second grinding unit 31. The values measured by the three thickness measuring units 320, 321 and 322 and shown in FIG. 4 entered the thicknesses shown. The value for “height of the center (reference value)” is a value measured by the thickness measuring unit 320, the value for “R / 2 height” is a value measured by the thickness measuring unit 321, and the value for “R height” is a through the thickness measuring unit 322 measured value. The input field of the present shape 121 functions as an input part 121 for inputting the present sectional shape of the wafer as shown in FIG. 1 shown.
    The target shape input field 122 is a field for inputting information (data) relating to the sectional target shape of the wafer W in the state after polishing is carried out by the polishing unit 4. In the target shape input field 122, the value for
    “Height of Center (reference value)” the target value for the height of the center
    Part Wo of the wafer W, the value for “R / 2 height” is a target value for the height of the intermediate part of the wafer W, and the value for “R height” is a target value for the height of the edge part We of the wafer W. Das Target shape input field 122 functions as a setting part 122 for inputting and setting the sectional target shape of the wafer W as shown in FIG. 1 shown.
    The input part 121 and the setting part 122 are used to input and set the values every time the processing conditions for processing the wafer W are set. In other words, information (data) regarding the sectional shape of the wafer W is inputted into the input field of the present shape 121 and the target shape input field 122 every time the processing conditions for processing the wafer W are set.
    The fine adjustment shaft change amount display panel 132 shown at a lower position in the wafer shape adjustment amount input panel 120 in Z2 grinding is a field for displaying the adjustment amount for the height of each of the L-wave as fine-adjustment shaft 521 and the R-wave as Fine adjustment shaft 531 to obtain the sectional target shape of the wafer W. The values in the display field 123 are calculated by the control part 60 according to the values in the input field of the present shape 121 and the target shape input field 122. In the case of shifting the L-wave and the R-wave up, a plus sign is appended to the values, while in the case of shifting the L-wave and R-wave down, a minus sign is appended to the values.
    The position memory panel 130 includes a selection part 131 for use in selecting one of the four chuck tables CTA to CTD and applying the setting amounts for the L-shaft and the R-shaft displayed in the display panel 123 to this selected chuck table. The position memory field 130 further comprises a memory key 132 which is suitable to be touched by the operator when storing the setting amounts. In the selection part 131, a field of the “item CT” is adapted to be touched by the operator, whereby an action menu is displayed. Accordingly, the operator can use any of the
    Select clamping tables CTA to CTD from the action menu. In FIG. 6 is
    “CTA” is selected in the selection part 131 as an example.
    The control part 60 shown in FIG. 1, reads the information (data) on the sectional target shape of the wafer W set in the setting part 122 and the information (data) on the present sectional shape of the wafer W inputted in the input part 121. Then, the control part 60 controls the movable support parts 52 and 53 to match the sectional target shape of the wafer W as set in the setting part 122 in the state after polishing has been carried out to the values of the height of the center (reference value) in the central part Wo, the R / 2-height at the intermediate part WM and the R-height at the edge part We, as entered in the input part 121, and the values for the height of the center (reference value), the R / 2-height and the R-height, as in the setting part 122 set to receive accordingly.
    The state set screen 100 shown in FIG. 6 is an initial screen. Accordingly, in the memory position display panel 110 of the fine adjustment shaft, the present positions of the L shaft and the R shaft in each of the chuck tables CTA to CTD are displayed. On the other hand, in the input field 120 of the wafer shape adjustment amount in Z2 grinding, all of the values are 0. Under this condition, the operator inputs the values required for the center height (reference value), the R / 2 height and the R height in the post-execution state of the test fine grinding have been measured, in the input field 121 of the present shape in the input field 120 of the wafer shape setting amount in Z2 grinding, whereby a shown in FIG. The state setting screen 100a shown in Fig. 8 is obtained. In the input field 121 of the present form in the form shown in FIG. 8, the value for the height of the center (reference value) is 0, and values for the R / 2 height and the R-height are relative values with respect to the value for the height of the center (reference value). The height of the center (reference value) is the height of the central part Wo, the R / 2 height is the height of the intermediate part Wm, and the R height is the height of the edge part We. In the input field of the present form 121, in the FIG. 8, a value of 0.00 µm for the height of the center (reference value), a value of 0.50 µm for the R / 2 height, and a value of 1.00 µm for the R height as on the wafer W in the state after execution
    values measured during test fine grinding. That is, the
    Wafer W obtained by performing the test fine grinding is of a thick center type. However, the target sectional shape of the wafer W in the state after polishing is carried out is a uniform sectional shape such that the thickness of the wafer W is uniform. Accordingly, in the FIG. 8, the value for the height of the center (reference value) is 0, the value for the R / 2 height is 0 and the value for the R height is 0.
    After the present shape and the target shape are inputted as mentioned above, the control part 60 compares the sectional target shape of the wafer W as inputted in the setting part 122 with the present sectional shape of the wafer W inputted in the inputting part 121, and shows then the values of the present shape and the target shape corresponding to the display area 123 of the amount of change of the fine adjustment wave.,. Then, the control part 60 controls the inclination adjusting unit 56 to change the inclination of the rotation axis 513 so that the wafer can be ground to obtain the sectional target shape. The handling for this control will now be described in more detail.
    As an example, with respect to the chuck table CTA, Table 1 illustrates a current value for the distance from the origin sensor 523b to the top of the fine adjustment shaft 521 (L wave) in the Z direction and a current value for the distance from the origin sensor 533b to the top of FIG Fine adjustment shaft 531 (R shaft) in the Z direction. Furthermore, an instantaneous value for the distance around the fixed shaft 541 is also shown in Table 1. Further, a target value corresponding to each current value is also shown in Table 1. The relative Z position of the fine adjustment shaft 521 (L shaft) with respect to the origin sensor 523b and the relative Z position of the fine adjustment shaft 531 (R shaft) with respect to the origin sensor 533b are stored in the display panel 110 of FIG
    The position of the fine adjustment shaft is displayed.
    (Table 1) Present Z, nn a Target Z position Shaft position [um] [um]
    24/38
    Fixed
    0.60 (ZFO) 0 (ZFL1) wave L-wave -0.32 (ZLO) O0 (ZLL) R-wave -0.28 (ZRO) O0 (ZRL1L)
    The control part 60 reads the values set in the setting part 122. Then, the control part 60 calculates an amount ML of change for the L wave in the Z direction from the equation (1) for
    Adjusting the Z position of the L shaft.
    ML = (ZLO - ZF0) - (ZL1 - ZF1) + ** Equation (1) = (-0.32 - 0.60) - (0 - 0) = -0.92
    Similarly, the control part 60 calculates an amount of change MR for the R wave in the Z direction from FIG
    Equation (2) to adjust the Z position of the R shaft.
    MR = (ZRO - ZFO) - (ZR1 - ZF1) + * - * Equation (2) = (-0.28 - 0.60) - (0 - 0) = -0.88
    Next, the control part 60 shows the values calculated above for ML and MR in the display area 123 of the amount of change of the fine adjustment wave of the value shown in FIG. 8 state setting screens 100a shown.
    Then, as shown on a condition setting screen 100b in FIG. 9, the "item CT" key in the selection part 131 is touched by the operator to display an action menu 131a. Then, “CTA” in the action menu 1311a is touched by the operator to select the chuck table CTA. Then, the memory key 132 is touched by the operator to store the change amounts of the fine adjustment shaft for the L-shaft and the R-shaft in the chuck table CTA.
    The control section 60 then drives the motors 520 and 530, which is shown in FIG. 2, to thereby move the fine adjustment shaft 521 (L shaft) and the fine adjustment shaft 531 (R shaft) by the amounts of change obtained above. Then, the control part 60 adds the values indicating the present positions of the L-wave and the R-wave to the values of the change amount calculated above
    Fine adjustment wave added. That is, the control part 60 performs the
    the following calculations.
    -0.32 + (-0.92) = -1.24
    -0.28 + (-0.88) = -1.16
    The control part 60 shows the results of this calculation in the fields of the L-wave and the R-wave for CTA in the display field 110 of the stored position of the fine adjustment shaft as shown on a condition setting screen 100c in FIG. 10 is shown. Further, the values for the amount of change in the fine adjustment shaft change amount display panel 123 are reset to zero.
    Also, a target value is inputted for the other chuck tables CTB, CTC and CTD, and the setting values for the L-flute and the R-flute in each chuck table are similarly calculated. The values calculated for the adjustment amount are stored, and the heights of the L-shaft and the R-shaft are actually adjusted by the movable support members 52 and 53 in the holding unit 51 for each chuck table. Then, the set values for the altitude are displayed in the display field 110 of the stored position of the fine adjustment shaft as shown in FIG. 10 shown.
    In this way, the height of each of the chuck tables CTA to CTD is adjusted to thereby change the inclination of the rotation axis 513 in each holding unit 51. Then, in the state where the inclination of the rotation axis 513 has been changed, the polishing step is carried out. Accordingly, the wafer W can be polished to have a uniform thickness.
    However, it is difficult to make the thickness of the wafer W uniform by performing this setting once. In the case where the fine grinding is carried out under the set conditions and the sectional shape of the wafer W in the state after the fine grinding is carried out does not become the values inputted in the input field of the present shape, the change amounts of the fine adjustment shafts 521 and 531 set again. The fine grinding and polishing are then carried out again. By repeating such an operation, the thickness of the wafer W can be made uniform.
    As described above, the sectional shape of the wafer becomes
    W in the state after performing fine grinding to a type thicker
    Center set. Then, the upper surface Wa of the wafer W is polished by using the polishing unit 4 so that the thickness of the wafer can be made uniform.
    As a modification, the target shape of the wafer in sections can be made different according to the clamping tables. Further, while the four holding units 51 are provided in this preferred embodiment, one or more holding units may be provided in the present invention.
    Further, while the grinding device 1 includes the polishing unit 4 in this preferred embodiment, the grinding device according to the present invention may not include a polishing unit. Further, the grinding apparatus of the present invention may accordingly comprise a single grinding apparatus.
    The present invention is not limited to the details of the preferred embodiment described above. The scope of the invention is defined by the appended claims, and all changes and modifications as come within the equivalency of the scope of the claims are therefore to be adopted
    Include invention.
    权利要求:
    Claims (3)
    [1]
    1. Grinding device comprising:
    a holding unit comprising a chuck table having a holding surface for holding a wafer, the chuck table being rotatable about a rotation axis passing through the center of the holding surface;
    a grinding unit comprising a spindle having an axis of rotation and a grinding wheel mounted on a lower end of the spindle, the grinding wheel having a plurality of abrasive elements arranged in a ring, wherein when the spindle is rotated, around thereby rotating the grinding wheel, the wafer held on the chuck table is ground by the abrasive elements of the grinding wheel being rotated;
    an inclination adjusting unit for adjusting an inclination of the rotation axis of the chuck table with respect to the rotation axis of the spindle; and
    an interactive control panel, wobel:
    the abrasives are capable of grinding the wafer held on the chuck table in a grinding area as a radial area extending from the center of the holding surface to an outer periphery thereof, and
    the interactive control panel is suitable, a target shape input field for inputting information regarding a sectional target shape of the wafer and an input field of the present shape for inputting information regarding a present sectional shape of the wafer that is ground under a condition wherein the inclination of the axis of rotation of the chuck table has not yet been changed to indicate
    the grinding device further comprises:
    a control part for comparing the information on the sectional target shape of the wafer as inputted in the target shape input field with the information on the present sectional shape of the wafer as inputted in the input field of the present shape and then controlling the inclination setting unit about the inclination of the rotation axis of
    Change the chuck so that the wafer is ground to
    to maintain the target shape of the wafer in sections.
    [2]
    2. Grinding device according to claim 1, wherein:
    the holding unit comprises a plurality of holding units, each having the clamping table,
    wherein the grinding device further comprises:
    a positioning unit for moving one of the plurality of holding units to a grinding position where the wafer is ground by the grinding unit, wherein:
    the interactive control panel is adapted to further display a selection part for use in selecting one of the plurality of holding units, and
    the control part is adapted to change the inclination of the axis of rotation of the chuck table in the A holding unit selected by using the selection part.
    [3]
    3. The grinding device of claim 1, wherein:
    Information on the sectional shape of the wafer is inputted into the target shape input field and the input field of the present shape every time processing conditions
    can be set when processing the wafer.
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    同族专利:
    公开号 | 公开日
    DE102020204370A1|2020-10-08|
    CZ2020194A3|2020-10-14|
    CN111805374A|2020-10-23|
    FI20205350A1|2020-10-06|
    JP2020168701A|2020-10-15|
    AT522399A3|2021-03-15|
    US20200316750A1|2020-10-08|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    DE4335980C2|1993-10-21|1998-09-10|Wacker Siltronic Halbleitermat|Method for positioning a workpiece holder|
    US9656370B2|2015-10-06|2017-05-23|Disco Corporation|Grinding method|CN113305732A|2021-06-22|2021-08-27|北京中电科电子装备有限公司|Multi-station full-automatic thinning grinding method for semiconductor equipment|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    JP2019072603A|JP2020168701A|2019-04-05|2019-04-05|Grinding device|
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